MMIC Introduction
Our design team has thorough understanding of p-HEMT, HBT, CMOS and MESFET devices and circuits. We find ourselves efficiently applying our knowledge, skills and efforts towards development of highly integrated ICs in different processes that include Si, SiGe, GaAs/AlGaAs, InGaAs /AlInAs etc. In the most time effective manner. Given is the listing of RF Arrays is high performing, reliable, cost effective RFICs and modules for current and next generation applications. In addition to our standard components and solutions we also provide custom products and solution to our customers.
Coming Up:
802.11 a Front End Modules with integrated LNA, PA and Switch in 4.9-5.8 GHz Band in a 4mm x 4mm Plastic Module
802.11 n Front End Modules
WiMax Front End Modules
Building blocks – LNA, PA, Switches, VCO, BALUN and High-Pass Filter are available as plastic packaged modules for multi-chip module solution.
FRONT END MODULES
WLAN RF Front End Module
The RWF111 is a RF Front End Module for 802.11 b/g systems.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic Front End MMIC 802.11b + g Operation Integrated PA/LNA/SPDT switch Integrated PA O/P Power Detector Operation up to 4.5V for cellular phone applications Package: 3.0 x 3.0mm QFN16 Package | 28 dB Gain 19 dBm linear Pout 802.11b @ 1.2% EVM 16 dBm linear Pout 802.11g @ 4% EVM DC Supply = 3.6V, 130 mA @ 19 dBm 802.11b DC Supply = 3.6V, 97 mA @ 16 dBm 802.11g 14dB Rx Gain 2.2dB Rx NF 8mA Rx Current |
ISM Band Front End Module
The RIF211 is a Front End Module for all ISM band Applications such as Bluetooth, Cordless phones, Wireless Audio, Home RF etc.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic Front End MMIC Internally matched to 50 Ohms ISM Band @ 3.3V Operation Integrated PA/LNA/SPDT switch Operation from 2.7V to 3.6V Package: 3.0 x 3.0mm QFN16 Package | 27 dB Gain P1dB @ 19 dBm Pout (Max) @ 20 dBm Quiescent Current : 24.6mA Current @ Peak Power : 124mA 15dB Rx Gain 2.2dB Rx NF 8mA Rx Current |
POWER AMPLIFIERS
2.4 GHz PA for WLAN Systems
The RWP111 is a PA designed for 802.11 b/g systems.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic PA MMIC 802.11b + g Operation Integrated PA O/P Power Detector Operation up to 4.5V for cellular phone applications Package: 3 mm x 3mm QFN | 28 dB Gain 19 dBm linear Pout 802.11b @ 1.2% EVM 18dBm linear Pout 802.11g @ 4% EVM DC Supply = 3.6V, 130 mA @ 19 dBm 802.11b DC Supply = 3.6V, 97 mA @ 18 dBm 802.11g |
2.4 GHz PA for WLAN Systems
The RWP112 is PA designed for 802.11 b/g systems.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic PA MMIC 802.11b + g Operation Integrated PA O/P Power Detector Operation up to 4.5V for cellular phone applications Package: 3 mm x 3mm QFN | 32 dB Gain 19 dBm linear Pout 802.11b @ 1.2% EVM 17.5 dBm linear Pout 802.11g @ 4% EVM DC Supply = 3.6V, 135 mA @ 19 dBm 802.11b DC Supply = 3.6V, 110 mA @ 17.5 dBm 802.11g |
2.4 GHz PA for ISM Band Applications
The RIP211 is a PA designed for all ISM band Applications such as Bluetooth, Cordless phones, Wireless Audio, Home RF etc.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic PA MMIC ISM Band @ 3.3V Operation Operation from 2.7V to 3.6V Package: 3mm x 3mm QFN Package | 27 dB Gain P1dB @ 20 dBm Pout(Max) @ 21 dBm Quiescent Current : 24.6mA Current @ Peak Power : 124mA |
LOW NOISE AMPLIFIERS
2.2-2.8 GHz Low Noise Amplifier
The RWIF731 is a Low Noise Amplifier designed for applications with a frequency between 2.2 – 2.8 GHz.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic LNA MMIC Operation from 2.7V to 3.6V ISM and WLAN Applications | 15 dB Gain 1.2 dB Noise Figure P1 dB @ 15 dBm IIP3 > 6 dBm Quiescent current : 8 mA Current at Peak power : 11 mA Return Loss at Input >10 Return Loss at output >6 |
2.2-2.8 GHz Low Noise Amplifier and Switch
The RWIF732 is a LNA/Switch IC designed for WLAN and ISM Band applications.
Features | Performance @ 2.4 - 2.5 GHz |
GaAs E/D PHEMT Monolithic LNA Switch MMIC Operation from 2.7V to 3.6V ISM and WLAN Applications | 14 dB Gain 2.2 dB Noise Figure P1 dB @ 14 dBm IIP3 > 6 dBm Quiescent current : 8 mA Current at Peak power : 11 mA Return Loss at Input >10 Return Loss at output >6 |
SWITCHES
RBS611 DC- 2GHz SP4T Reflective Switch
Features | Performance @ 2.4 - 2.5 GHz |
§GaAs MESFET SP4T MMIC Switch §DC – 2 GHz Operation §Ultra low DC Power Consumption §SO16 Package | §Insertion Loss: 0.6 dB Typical DC - 1GHz 0.8 dB Typical 1 – 2 GHz Isolation: 31 dB Typical DC – 1 GHz 24 dB Typical 1 – 2 GHz P1dB : Greater than 20 dBm at 50 MHz Greater than 24 dBm at 2 GHz |
RBS614 DC- 6GHz DPDT Reflective Switch
Features | Performance @ 2.4 - 2.5 GHz |
§GaAs MESFET DPDT MMIC Switch DC – 6 GHz Operation Ultra low DC Power Consumption SO8 Package | §Insertion Loss: 0.5 dB Typical DC - 3GHz 0.8 dB Typical 3 – 6 GHz Isolation: 45 dB Typical DC – 3 GHz 35 dB Typical 3 – 6 GHz P1dB : 19.5 dBm at 50 MHz 25.5 dBm at 0.5 - 4 GHz |
RBS616 DC- 3 GHz SPDT Reflective Switch
Features | Performance @ DC - 3 GHz |
GaAs MESFET SPDT MMIC Switch DC – 3 GHz Operation Ultra low DC Power Consumption S08 Package | Insertion Loss: 1 dB Typical DC - 1GHz 1.4 dB Typical 1 – 3 GHz Isolation: 40 dB Typical DC – 1 GHz 23 dB Typical 1 – 3 GHz P1dB : Greater than 20 dBm at 50 MHz Greater than 25 dBm at 1 GHz |
RBS617 DC- 3 GHz SPDT Terminated Switch
Features | Performance @ DC - 3 GHz |
GaAs MESFET SPDT Terminated MMIC Switch DC – 3 GHz Operation Ultra low DC Power Consumption SO8 Package | Insertion Loss: 1 dB Typical DC - 1GHz 1.3 dB Typical 1 – 3 GHz Isolation: 45 dB Typical DC – 1 GHz 26 dB Typical 1 – 3 GHz P1dB : 21 dBm at 50 MHz 27 dBm at 2 GHz |
SART TRANSCEIVER
RXST811 MMIC for SART Applications
Features | Performance @ X Band Frequency 9.17 – 9.56 GHz |
§GaAs MESFET MMIC Integrated Tx/Rx Switch High Output Power High Linearity VCO Available in die form or surface mount packages
| VCO
SWITCH
|